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| AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4456 is Pb-free (meets ROHS & Sony 259 specifications). AO4456 is a Green Product ordering option. AO4456 and AO4456 are electrically identical. Features VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.6m (VGS = 10V) RDS(ON) < 5.6m (VGS = 4.5V) D S S S G D D D D G S Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead TA=25C TA=70C IDSM IDM PDSM TJ, TSTG Maximum 30 12 20 16 120 3.1 2.0 -55 to 150 Units V V A W C Symbol t 10s Steady-State Steady-State RJA RJL Typ 31 59 16 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4456 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=1mA, VGS=0V VDS=24V, V GS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, V DS=5V VGS=10V, ID=20A TJ=125C 1.4 120 3.8 5.9 4.5 112 0.37 0.5 5 6430 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 756 352 0.9 96 VGS=10V, VDS=15V, ID=20A 44 17 13 17.5 VGS=10V, V DS=15V, R L=0.75, RGEN=3 IF=20A, dI/dt=300A/s IF=20A, dI/dt=300A/s 10 56 10.5 20 26 25 1.4 115 53 nC nC nC ns ns ns ns ns nC 7716 4.6 7.4 5.6 1.8 Min 30 0.008 9 0.1 20 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of RJA is measured with the device in a still air environment with TA =25C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. C. The R JA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev1: June 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 6V 120 90 ID(A) 60 30 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 6 Normalized On-Resistance 1.8 VGS=4.5V 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 30 60 90 120 150 180 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 10 ID=20A 8 RDS(ON) (m) 125C IS (A) 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=20A VGS=10V VGS=3.5V 10V 4.5V ID (A) 25 20 15 10 25C 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 125 30 VDS=5V 5 RDS(ON) (m) VGS=4.5V 4 3 VGS=10V 2 6 4 Alpha & Omega Semiconductor, Ltd. AO4456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 12000 10000 Capacitance (pF) VDS=15V ID=20A 8000 6000 4000 Crss 2000 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Ciss 1000.0 100.0 100 ID (Amps) Power (W) 10.0 1.0 0.1 0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 RDS(ON) limited 0.1s 10ms 1ms DC 10s 100 90 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 TJ(Max)=150C TA=25C TJ(Max)=150C TA=25C Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 0.001 0.01 0.1 1 PD Ton T 100 1000 0.01 Single Pulse 0.001 0.00001 0.0001 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. AO4456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1.0E-02 VDS=24V IR (A) 1.0E-03 1.0E-04 1.0E-05 1.0E-06 100 150 200 Temperature (C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature 70 60 50 Qrr (nC) 40 30 20 10 0 0 5 10 15 20 25 30 4 Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 60 125C 50 40 Qrr (nC) 30 20 10 0 0 Irm 200 400 600 800 Qrr Is=20A 25C 125C 25C 8 7 6 Irm (A) 5 4 3 2 1 0 1000 trr (ns) 35 30 25 20 15 10 5 0 0 200 400 600 800 0 1000 125C 25C 25C trr S 1 125C Is=20A Irm Qrr 125C 6 di/dt=800A/us 125C 7 25C Irm (A) trr (ns) 20 15 10 5 25C 0 0 5 10 15 20 25 30 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 3 trr 8 25 0 50 VSD(V) VDS=12V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 100 150 200 Temperature (C) Figure 13: Diode Forward voltage vs. Junction Temperature di/dt=800A/us 125C 3 2.5 2 25C 1.5 S 125C 1 0.5 0 50 IS=1A 5A 20A 10A 25C 5 2 S di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt Alpha & Omega Semiconductor, Ltd. 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